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- Title
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.
- Authors
Vinnichenko, M.; Vorobjev, L.; Firsov, D.; Mashko, M.; Balagula, R.; Belenky, G.; Shterengas, L.; Kipshidze, G.
- Abstract
The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.
- Subjects
CARRIER density; INFRARED lasers; INJECTION lasers; QUANTUM wells; INDIUM compounds; LUMINESCENCE; WAVEGUIDES
- Publication
Semiconductors, 2013, Vol 47, Issue 11, p1513
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782613110237