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- Title
Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors.
- Authors
Pathak, Priyam; Deb, Deepjyoti; Nath, Dwipayan; Das, Prachuryya Subash; Choudhury, Hirakjyoti; Goswami, Rupam
- Abstract
This article reports the effects of incomplete ionization on the low power performance of silicon-on-insulator (SOI) n-p-n dual-gate tunnel field-effect transistors (TFET) through calibrated technology computer-aided design simulations. The effects of drain-induced barrier thinning and resistivity profiles are reported for the proposed device in the presence and absence of incomplete ionization. A current sensitivity parameter is considered for analysis, which refers to the deviation of the drain current of the device with incomplete ionization included from the case without incomplete ionization. Considering the Altermatt incomplete ionization parameters for boron and arsenic dopants in the device of interest, this article presents the investigation of incomplete ionization for various gate work functions, and mobility models (doping-dependent models: Masetti, Arora, and Philips Unified, and mobility degradation models: University of Bologna, Lombardi, and Inversion and Accumulation Layer). The impact of a trap-assisted tunneling model on sensitivity is also reported.
- Subjects
TUNNEL field-effect transistors; UNIVERSITY of Bologna; CHARGE carrier mobility; COMPUTER-aided design; INDIUM gallium zinc oxide; DOPING agents (Chemistry)
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 3, p1142
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-023-10852-6