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- Title
Structural and Electrical Properties of TaLaO Thin Films.
- Authors
Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza
- Abstract
Effect of annealing temperature on the characteristics of sol-gel-driven TaLaO thin film spin-coated on Si substrate as a high- k gate dielectric was studied. TaLaO thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that TaLaO film had an amorphous structure. Therefore, TaLaO film was chosen to continue the present studies. The morphology of TaLaO films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on TaLaO film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that TaLaO films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10 A/cm at 1 V).
- Subjects
THIN film research; SOL-gel materials; SCANNING electron microscopy; ATOMIC force microscopy techniques; AMORPHOUS substances
- Publication
Journal of Electronic Materials, 2014, Vol 43, Issue 11, p4349
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3353-5