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- Title
Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO.
- Authors
Lee, Jin-Woo; Kwon, Hyeon-Min; Kim, Myeong-Ho; Lee, Seung-Ryul; Kim, Young-Bae; Choi, Duck-Kyun
- Abstract
Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I- V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO was examined in a Pt/a-IGZO/TaO/AlO/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO, an oxygen-rich TaO interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 10 at a read voltage of −0.5 V, and the rectifying ratio was about 10 at ±2 V.
- Subjects
RESISTIVE force; SWITCHING theory; AMORPHOUS alloys; HYSTERESIS; CROSSTALK; SCHOTTKY effect
- Publication
Journal of Electronic Materials, 2014, Vol 43, Issue 5, p1384
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3083-8