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- Title
A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters.
- Authors
Cui, Miao; Zhu, Yuhao; Cao, Pingyu; Li, Ang; Bu, Qinglei; Mitrovic, Ivona Z.; Su, Xujun; Zhao, Yinchao; Wen, Huiqing; Liu, Wen; Zhao, Cezhou
- Abstract
This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with VIN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.
- Subjects
DC-to-DC converters; ELECTRIC current rectifiers; GALLIUM nitride; MODULATION-doped field-effect transistors; WIDE gap semiconductors
- Publication
IET Power Electronics (Wiley-Blackwell), 2023, Vol 16, Issue 9, p1582
- ISSN
1755-4535
- Publication type
Article
- DOI
10.1049/pel2.12498