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- Title
Field-effect transistor based on the zigzag ZrSe<sub>2</sub> nanoribbons.
- Authors
Eskandari, S.; Khorrami, S. Karimi; Berahman, M.
- Abstract
In order to replace silicon in field-effect transistors, new materials need to be investigated. ZrSe2 nanoribbons are promising materials for such applications. The stability of ZrSe2 nanoribbons with different edges is studied using density functional theory. This shows that substrate stress is needed for stability, unlike previous reports. It has been demonstrated that the Se edge terminated zigzag ZrSe2 nanoribbons are promising for tunneling field-effect transistor applications. Using the non-equilibrium green function, the current–voltage characteristic is studied for a ballistic tunneling field-effect transistor with a symmetry gate. It is shown that negative gate voltages reach the desired Ion of IRTS2020, demonstrating the potential of ZrSe2 nanoribbon transistors. Results indicate that gate voltage can effectively control Ion−Ioff current at low-voltage bias, making it suitable for various power applications. Using the local device density of state, the possibility of controlling tunneling via gate voltage is clearly investigated. Results demonstrate that ZrSe2 nanoribbons are appropriate for future field-effect transistors when placed on the proper substrate.
- Subjects
FIELD-effect transistors; TUNNEL field-effect transistors; NANORIBBONS; QUANTUM tunneling; DENSITY of states; INDUCTIVE effect; MODULATION-doped field-effect transistors; CURRENT-voltage characteristics
- Publication
Applied Physics A: Materials Science & Processing, 2023, Vol 129, Issue 12, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-023-07057-3