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- Title
An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications.
- Authors
Ghosh, P.; Tripathi, S.; Devi, W. V.
- Abstract
In this article, an extended dual source double-gate structure of tunnel FET is proposed to detect firmly separated spectral lines of near-infrared lights. Comparative analysis of spectral response at different wavelengths has been carried out at minimal intensity of light (0.5 W/cm2). Plot of spectral sensitivity of device is observed using the spectral response of λ 1 = 700 nm and λ 2 = 1100 nm. It has been observed that the peak spectral sensitivity of device is 2.33. Maximum optical generation rate of the device in the gate region is found to be in the order of 1021 cm−3 s−1.
- Subjects
OPTICAL sensors; SPECTRAL sensitivity; TUNNEL field-effect transistors; SPECTRAL lines; LIGHT intensity
- Publication
Applied Physics A: Materials Science & Processing, 2023, Vol 129, Issue 11, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-023-07071-5