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- Title
Fabrication of Cu<sub>2</sub>SnS<sub>3</sub> thin films by dual-source fine channel mist CVD.
- Authors
Okamura, Kazuya; Saito, Ren; Kanai, Ayaka; Tanaka, Kunihiko
- Abstract
Cu2SnS3 (CTS) thin films were prepared by a dual-source mist chemical vapor deposistion (CVD) method. Cu–Sn and S mist sources were prepared separately, without a vacuum apparatus or sulfurizing process to reduce cost and to prevent exfoliation of the deposited CTS thin film. The hot plate temperature was varied in the range 350–400 ℃, and CTS thin films with a suitable morphology for solar cells were produced at 370 ℃. However, the composition ratio varied significantly upstream and downstream of the mist flow. Moreover, the S/metal ratio for all obtained films was too low, as a result of a temperature drop due to the low-temperature mist flow. Therefore, the effect of reducing the lift gas flow rate for the Cu–Sn mist source on the CTS films was investigated to prevent this temperature drop. Samples fabricated with a reduced lift gas flow rate exhibited showed X-ray diffraction peaks attributed to the (200), ( 1 ¯ 31 ), ( 1 ¯ 33 ), and ( 3 ¯ 33) planes of monoclinic CTS, as well as monoclinic CTS Raman peaks. In addition, the estimated bandgap energy for the CTS thin films was 0.93–0.96 eV, which corresponds to that reported for monoclinic CTS. This indicates that the fabricated samples were monoclinic CTS deposited by dual-source fine channel mist CVD without the need for a sulfurization process.
- Subjects
THIN films; AEROSOLS; OIL well gas lift; GAS flow; SOLAR cells
- Publication
Applied Physics A: Materials Science & Processing, 2022, Vol 128, Issue 11, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-022-06133-4