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- Title
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
- Authors
Galiev, G. B.; Vasiliev, A. L.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klimov, E. A.; Klochkov, A. N.; Trunkin, I. N.; Pushkarev, S. S.
- Abstract
The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices consist of 100 periods of alternating In0.53Ga0.47As and In0.52Al0.48As layers with nominal thicknesses of 12 and 8 nm, respectively. The structural quality of the samples has been investigated by transmission electron microscopy (TEM). It is shown that the superlattice on the InP(100) substrate is single-crystal with high concentration of stacking faults, twins, and small-angle domains. The superlattice on the InP(111)A substrate is polycrystalline; however, the grown layers can be traced throughout almost the entire superlattice. A wave-like curvature of the layers grown on the InP(111)A substrate is much larger than that of the layers grown on the InP(100) substrate: the angular ranges of layer deviation from the horizontal growth plane reach ±30° and ±18°, respectively.
- Subjects
SUPERLATTICES; TRANSMISSION electron microscopy; MOLECULAR beam epitaxy; EPITAXY
- Publication
Crystallography Reports, 2020, Vol 65, Issue 3, p496
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774520030104