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- Title
Photoreduction of nitrogen trifluoride with controlled release of radicals.
- Authors
Liu, Xingang; Zhang, Jiahui; Zhang, Renxi; Hou, Huiqi; Chen, Shanping; Zhang, Yi
- Abstract
BACKGROUND With the rapid growth of the semiconductor and thin film transistor liquid crystal display manufacturing industries, large quantities of the potent greenhouse gas nitrogen trifluoride ( NF3) is in demand. But perfluorocarbons are very stable compounds because of their molecular structures. Therefore, in the atmosphere, NF3 is difficult to oxidize by O3, NO, NO2, and OH radicals, except by excited oxygen atoms O(1 D) that can react with it to form NF2 or other products. In this study the possible degradation process of NF3 in the 'controlled release of radicals' reactor is discussed. RESULTS Under the conditions of 5 mmHg partial pressure of NF3 and 600 mmHg total pressure with buffer gas of argon, NF3 was photodegraded in an in situ reactor with a 'controlled release of radicals' system. The results indicated that reductive double bonds and allyl radicals, slowly released from polyisoprene irradiated by a UV lamp emitting 185 and 253.7 nm of light, could contribute to the NF3 degradation in the CRR system. The NF3 degradation efficiency, significantly affected by O2 and almost independent of N2, reached 96% with a kinetic rate constant k ≈ 1.77 × 10−4 s−1 after 300 min of ultraviolet irradiation. CONCLUSION According to the experimental results, a potential way of continuous photoreduction of NF3 was found, since excited double bonds and allyl radicals are consequently released by irradiating the surface of the polymer matrix. The considerable degradation reaction constant of NF3 and no fluoride byproducts in gas make it possible for industry application. © 2013 Society of Chemical Industry
- Subjects
NITROGEN trifluoride; RADICALS; THIN films; LIQUID crystal displays; PERFLUOROCARBONS; PHOTOREDUCTION
- Publication
Journal of Chemical Technology & Biotechnology, 2014, Vol 89, Issue 3, p436
- ISSN
0268-2575
- Publication type
Article
- DOI
10.1002/jctb.4136