We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides.
- Authors
Liu, Chien; Tung, Yi-Chun; Wu, Tian-Li; Cheng, Chun-Hu; Tseng, Chih-Yang; Chen, Hsuan-Han; Chen, Hsi-Han; Ma, Jun; Lin, Chien-Liang; Zheng, Zhi-Wei; Chou, Wu-Ching; Hsu, Hsiao-Hsuan
- Abstract
Herein, the gamma‐ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma‐ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%‐Al‐doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric‐stress‐induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.
- Subjects
FERROELECTRICITY; FERROELECTRIC devices; HAFNIUM oxide; FERROELECTRIC capacitors; IRRADIATION
- Publication
Physica Status Solidi - Rapid Research Letters, 2019, Vol 13, Issue 12, pN.PAG
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201900414