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- Title
Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics.
- Authors
Qin, Guoshuai; Lu, Chunsheng; Zhang, Xin; Zhao, Minghao
- Abstract
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications.
- Subjects
PIEZOELECTRIC semiconductors; NUMERICAL analysis; ELLIPSOIDS; ELECTRIC displacement; ELECTRIC current measurement
- Publication
Materials (1996-1944), 2018, Vol 11, Issue 10, p2000
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma11102000