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- Title
Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties.
- Authors
Cui, Zhen; Wang, Xia; Li, Enling; Ding, Yingchun; Sun, Changlong; Sun, Minglei
- Abstract
The electronic and optical properties of alkali-metal-adsorbed graphene-like gallium nitride (g-GaN) have been investigated using density functional theory. The results denote that alkali-metal-adsorbed g-GaN systems are stable compounds, with the most stable adsorption site being the center of the hexagonal ring. In addition, because of charge transfer from the alkali-metal atom to the host, the g-GaN layer shows clear n-type doping behavior. The adsorption of alkali metal atoms on g-GaN occurs via chemisorption. More importantly, the work function of g-GaN is substantially reduced following the adsorption of alkali-metal atoms. Specifically, the Cs-adsorbed g-GaN system shows an ultralow work function of 0.84 eV, which has great potential application in field-emission devices. In addition, the alkali-metal adsorption can lead to an increase in the static dielectric constant and extend the absorption spectrum of g-GaN.
- Subjects
ALKALI metals; OPTICAL properties of gallium nitride; DOPING agents (Chemistry); DENSITY functional theory; ELECTRON work function; MONOMOLECULAR films
- Publication
Nanoscale Research Letters, 2018, Vol 13, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/s11671-018-2625-z