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- Title
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III-V heterostructures.
- Authors
Degtyarev, V.; Khazanova, S.; Konakov, A.
- Abstract
The size-quantized energy subbands and envelope wave functions for [001] quantum wells based on zinc-blende III-V semiconductors are numerically calculated using the eight-band Kane model and finite-difference discretization scheme in coordinate space. The effect of the quantum-well band parameters and external electric field oriented along the structure growth direction on the ratio between the Rashba and Dresselhaus spin-orbit coupling parameters is studied. It is demonstrated that at certain electric-field values the spin-orbit coupling parameters in GaAs/InGaAs structures can be equal, which ensures the condition for forming stable spin helices. In addition, it is established that the spin-orbit coupling linear in wave vector in symmetric GaAs/InGaAs wells can disappear under certain well widths and barrier chemical compositions.
- Subjects
QUANTUM wells; ENERGY-band theory of solids; ELECTRIC fields; ELECTROMAGNETIC theory; HELICES (Algebraic topology)
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1409
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110094