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- Title
High Hall Mobility P-type Cu<sub>2</sub>SnS<sub>3</sub>-Ga<sub>2</sub>O<sub>3</sub> with a High Work Function.
- Authors
Kim, Jeonggi; Kim, Hyo-Min; Cho, Sinyoung; Avis, Christophe; Jang, Jin
- Abstract
A new transparent p-type oxide semiconductor (POS) is reported, Cu2SnS3-Ga2O3, having high Hall mobility of 36.22 cm2 V-1s-1, and high work function of 5.17 eV. The existence of Cu2SnS3 and Ga2O3 phases in the film is confirmed by X-ray photoelectron spectroscopy results and the Cu2SnS3 shows polycrystalline structure according to Raman spectrum and X-ray diffraction analysis. The transparent Cu2SnS3-Ga2O3 exhibits the carrier concentration of 5.86 × 1016 cm-3, and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light-emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A-1, power efficiency of 31.97 lm W-1, and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A-1, power efficiency of 20.33 lm W-1, and EQE of 12.36%. The Cu2SnS3-Ga2O3 developed in this work can be widely used as a transparent and conductive p-type oxide for thin-film devices.
- Subjects
COPPER compounds; QUANTUM chemistry; SEMICONDUCTOR materials; X-ray photoelectron spectroscopy; X-ray diffraction; ELECTRICAL resistivity
- Publication
Advanced Functional Materials, 2018, Vol 28, Issue 34, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.201802941