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- Title
Twinning in GaAs nanowires on patterned GaAs(111)B.
- Authors
Walther, Thomas; Krysa, Andrey B.
- Abstract
We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B substrates by metal-organic chemical vapour epitaxy without catalysts. Twins perpendicular to the growth direction form in the nanowires, their {111}-type side facets leading to corrugation of their {110} side walls. The top facets are almost atomically smooth. Aberration corrected annular dark-field scanning transmission electron microscopy reveals all twins are rotational, commencing with layers of Ga and finishing with As atoms. Energy-loss spectroscopic profiling has shown no significant changes in the band-gap or bulk plasmon energy at those twin boundaries, and the observed reduction of the interface plasmon energy by ∼0.13 eV is close to the detection limit of the technique, reflecting the very low energetic electronic changes related to twin formation.
- Subjects
GALLIUM arsenide; TWINNING (Crystallography); NANOWIRE crystallography; SILICA; ELECTRON energy loss spectroscopy
- Publication
Crystal Research & Technology, 2015, Vol 50, Issue 1, p62
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.201400166