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- Title
Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold.
- Authors
Grekhov, I. V.; Rodin, P. B.
- Abstract
It is shown that a model of multistreamer switching from the blocking to conducting state in high-voltage diode structures cannot consistently explain the phenomenon of ultrafast switching of such silicon structures into the conducting state, which was experimentally observed in the rapid growth of the reverse bias voltage in strong (∼1 MV/cm) electric fields.
- Subjects
HIGH voltages; SILICON compounds; ZENER diodes; SEMICONDUCTOR diodes; ELECTRIC fields; FIELD theory (Physics)
- Publication
Technical Physics Letters, 2007, Vol 33, Issue 2, p180
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785007020265