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- Title
Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates.
- Authors
Odnoblyudov, V. A.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Gladyshev, A. G.; Mamutin, V. V.; Tsatsul’nikov, A. F.; Ustinov, V. M.
- Abstract
Room-temperature photoluminescence (PL) at 1.55 µm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The integral intensity of PL from the new structure with InAs/(In)GaAsN QDs is comparable to that from a structure with InGaAsN quantum wells emitting at 1.3 µm.
- Subjects
PHOTOLUMINESCENCE; HETEROSTRUCTURES; QUANTUM dots
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 11, p964
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1526898