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- Title
Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition.
- Authors
Chen, X.Y.; Yang, B.; Zhu, T.; Wong, K.H.; Liu, J.M.; Liu, Z.G.
- Abstract
(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices.
- Subjects
ORGANOMAGNESIUM compounds; SILICON
- Publication
Applied Physics A: Materials Science & Processing, 2002, Vol 74, Issue 4, p567
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390100904