We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Effect of the Initial Doping Level on Changes in the Free-Carrier Concentration in Porous Silicon during Ammonia Adsorption.
- Authors
Pavlikov, A. V.; Osminkina, L. A.; Belogorokhov, I. A.; Konstantinova, E. A.; Efimova, A. I.; Timoshenko, V. Yu.; Kashkarov, P. K.
- Abstract
Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 1018cm–3. In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption. © 2005 Pleiades Publishing, Inc.
- Subjects
INFRARED spectroscopy; AMMONIA; ADSORPTION (Chemistry); POROUS silicon; ELECTRONS
- Publication
Semiconductors, 2005, Vol 39, Issue 11, p1338
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.2128462