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- Title
High Power Single-Mode (λ = 1.3–1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures.
- Authors
Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Golikova, E. G.; Ryaboshtan, Yu. A.; Tarasov, I. S.
- Abstract
The possibility of achieving maximal optical output power in the single-mode lasing for mesa-stripe laser diodes fabricated on the basis of InGaAsP/InP quantum-well heterostructures with separate confinement have been studied both experimentally and theoretically. The basic condition for the single-mode lasing of laser diodes in a wide range of driving currents is shown to be the precise choice of the effective refractive index Δn[SUBL] discontinuity in the plane parallel to the p-n junction. A InGaAsP/InP separate confinement heterostructure with a step waveguide, with a threshold current density of 180 A/cm[SUP2] and an internal quantum efficiency of stimulated emission of 93-99%, has been manufactured via the MOCVD method. The optimization of the mesa-stripe diode design for the developed InGaAsP/InP heterostructure is carried out with the aim of achieving maximal optical output power in the case of single-mode lasing. An output power of 185 mW is attained in the laser diode with the mesa-stripe width W = 4.5 μm (λ = 1480 nm). The maximal continuous output power was as high as 300 mW. The full width at half-maximum (FWHM) of the lateral far-field pattern increased by 1° relative to the threshold value.
- Subjects
LASERS; DIODES; REFRACTIVE index; QUANTUM wells
- Publication
Semiconductors, 2002, Vol 36, Issue 11, p1308
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1521236