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- Title
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.
- Authors
Maleev, N. A.; Zhukov, A. E.; Kovsh, A. R.; Egorov, A. Yu.; Ustinov, V. M.; Krestnikov, I. L.; Lunev, A. V.; Sakharov, A. V.; Volovik, B. V.; Ledentsov, N. N.; Kop’ev, P. S.; Alfërov, Zh. I.; Bimberg, D.
- Abstract
Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3 µm.
- Subjects
HETEROSTRUCTURES; SEMICONDUCTORS; INDIUM compounds; GALLIUM arsenide
- Publication
Semiconductors, 1999, Vol 33, Issue 5, p586
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187733