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- Title
Tuning Electrical Properties and Achieving High TCR in P-Doped a-Si<sub>x</sub>C<sub>1−x</sub>:H Films.
- Authors
Valencia-Grisales, D. F.; Reyes-Betanzo, C.
- Abstract
In this study, the characteristics of phosphorus-doped hydrogenated amorphous silicon carbide prepared by radio-frequency glow discharge decomposition of a mixture of silane (SiH4), methane (CH4) and hydrogen (H2) were investigated. Molecular vibration, surface morphology, dark electrical conductivity, and activation energy were analyzed. The gas phase composition of CH4 was varied in the range of 0.40–0.95 relative to SiH4, while the molar fraction of phosphine (PH3) in the gas phase was adjusted from 2.75% to 10%. It was observed that the molar fraction of carbon (C) in the film affects its homogeneity, resulting in the formation of regions rich in silicon (Si) and amorphous silicon carbide (a-SixC1−x), as well as the formation of nc-Si clusters, leading to lower surface roughness. The variation in electrical properties concerning doping and the molar fraction of carbon is consistently explained in this study.
- Subjects
SILICON carbide; SILICON carbide films; HYDROGENATED amorphous silicon; MOLECULAR vibration; MOLE fraction; DOPING agents (Chemistry); GLOW discharges
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 7, p3946
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-024-11166-x