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- Title
Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties.
- Authors
Jha, Himanshu; Yadav, Asha; Singh, Mukesh; Kumar, Shailendra; Agarwal, Pratima
- Abstract
Silicon carbide (SiC) thin films have been deposited using a hot-wire chemical vapor deposition technique on quartz substrates with a mixture of silane, methane, and hydrogen gases as precursors at a reasonably high deposition rate of approximately 15 nm/min to 50 nm/min. The influence of the filament temperature ( T) on the structural, optical, and electrical properties of the SiC film has been investigated using x-ray diffraction, Raman scattering, Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible-near infrared transmission spectroscopy, and dark conductivity ( σ) studies. Films deposited at low T (1800°C to 1900°C) are amorphous in nature with high density of Si-Si bonds, whereas high- T (≥2000°C) films are nanocrystalline embedded in an amorphous SiC matrix with higher concentration of Si-C bonds and negligible concentration of Si-Si bonds. The bandgap ( E) varies from 2.5 eV to 3.1 eV and σ (50°C) from ∼10 Ω cm to 10 Ω cm as T is increased from 1900°C to 2200°C. This increase in E and σ is due to microstructural changes and unintentional oxygen doping of the films.
- Subjects
SILICON carbide thin films; CHEMICAL vapor deposition; OPTICAL properties of silicon carbide; X-ray diffraction; RAMAN scattering; FOURIER transform infrared spectroscopy
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 3, p922
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3580-9