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- Title
β-(Al,Ga)<sub>2</sub>O<sub>3</sub> for High Power Applications — A Review on Material Growth and Device Fabrication.
- Authors
Jian, Ashley (Zhe); Khan, Kamruzzaman; Ahmadi, Elaheh
- Abstract
Gallium Oxide has attracted a great deal of attention for power electronics due to its large bandgap (∼4.8 eV) as well as availability of cost effective, large area, high quality substrates. In this article, we will discuss advancements in homoepitaxial and heteroepitaxial growth of β-(Al,Ga)2O3 and their heterostructures via different growth techniques with the emphasis on metal organic chemical vapor deposition, molecular beam epitaxy, and halide vapor phase epitaxy. We will also review various device structures demonstrated for high power applications.
- Subjects
MOLECULAR beam epitaxy; EPITAXY; METAL organic chemical vapor deposition; HOMOEPITAXY; POWER electronics
- Publication
International Journal of High Speed Electronics & Systems, 2019, Vol 28, Issue 1/2, pN.PAG
- ISSN
0129-1564
- Publication type
Article
- DOI
10.1142/S0129156419400068