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- Title
Electronic structures of the F-terminated AlN nanoribbons.
- Authors
SONG, YU-LING; LU, DAO-BANG; CUI, BEN-LIANG; ZHANG, JIAN-MIN
- Abstract
Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the direct band gap of the armchair ones decrease monotonically with increasing ribbon width. In contrast, the F-terminated AlN nanoribbons have narrower band gaps than those of the H-terminated ones when the ribbons have the same bandwidth. The density-of-states (DOS) and local density-of-states (LDOS) analyses show that the top of the valence band for the F-terminated ribbons is mainly contributed by N atoms, while at the side of the conduction band, the total DOS is mainly contributed by Al atoms. The charge density contour analyses show that Al-F bond is ionic because the electronegativity of F atom is much stronger for F atom than for Al atom, while N-F bond is covalent because of the combined action of the stronger electronegativity and the smaller covalent radius.
- Subjects
NANOSTRUCTURED materials; ELECTRONIC structure; SEMICONDUCTORS; BAND gaps; ELECTRONEGATIVITY; BANDWIDTHS; ALUMINUM nitride
- Publication
Pramana: Journal of Physics, 2012, Vol 78, Issue 3, p469
- ISSN
0304-4289
- Publication type
Article
- DOI
10.1007/s12043-011-0240-y