We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Structural and electrical-physical properties of the ohmic contacts based on palladium to n<sup>+</sup>-n-n<sup>++</sup>-n<sup>+++</sup>-InP.
- Authors
Belyaev, A. E.; Boltovets, N. A.; Bobyl, A. B.; Kladko, V. P.; Konakova, R. V.; Kudryk, Ya. Ya.; Nasyrov, M. U.; Sachenko, A. V.; Slipokurov, V. S.; Slepova, A. S.; Safryuk, N. V.; Gudymenko, A. I.; Shynkarenko, V. V.
- Abstract
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au-Ti-Pd-n+-InP and Au-Ti-Ge-Pd-n+-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n+-n-n++-n+++-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250...380 K the current transport mechanism in the ohmic contacts Au-Ti-Pd-n+-InP is thermal-field one, and in the ohmic contacts Au-Ti-Ge-Pd-n+-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~109 cm-2.
- Subjects
PALLADIUM; OHMIC contacts; SEMICONDUCTOR-metal boundaries; VACUUM; TEMPERATURE
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, Vol 18, Issue 4, p391
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo18.04.391