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- Title
Phase transition, leakage conduction mechanism evolution and enhanced ferroelectric properties in multiferroic Mn-doped BiFeO thin films.
- Authors
Liu, Yalong; Wei, Jie; Liu, Yang; Bai, Xiaofei; Shi, Peng; Mao, Shengchun; Zhang, Xueqian; Li, Chen; Dkhil, Brahim
- Abstract
Pure and Mn-doped BiFeO thin films were prepared by a facile chemical solution deposition process. X-ray diffraction patterns and Raman spectra imply a phase transition from a rhombohedral structure in pure BiFeO film to a nearly tetragonal structure in Mn-doped BiFeO films. Moreover, it is found that doping of Mn could greatly modify the surface morphology, leakage current properties and ferroelectric properties of BiFeO films. Consequently, the lowest leakage current density and the largest remnant polarization are observed in BiFeMnO film which could be well explained by the leakage conduction mechanism and its evolution from the space-charge-limited current behavior for BiFeO and BiFeMnO films to the Poole-Frenkel emission for BiFeMnO film, as well as completely an Ohmic behavior for BiFeMnO film. Based on the X-ray photoelectron spectroscopy analysis of Mn ions, we argue that the varied valences of Mn ions such as Mn, Mn and Mn may play an important role in lowering leakage current density and enhancing the ferroelectric properties of BiFeO films.
- Subjects
PHASE transitions; FERROELECTRICITY; MULTIFERROIC materials; THIN films; MANGANESE; RAMAN spectra
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 3, p3095
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-4135-4