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- Title
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Authors
Youngrak Park; Jung-Jin Kim; Woojin Chang; Hyun-Gyu Jang; Jeho Na; Hyunsoo Lee; Chi-Hoon Jun; Ho-young Cha; Jae Kyoung Mun; Sang Choon Ko; Eun Soo Nam
- Abstract
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.
- Subjects
SEMICONDUCTOR-metal boundaries; SCHOTTKY barrier; SCHOTTKY barrier diodes; METAL semiconductor field-effect transistors; FIELD-effect transistors
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 16, p1164
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2014.1747