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- Title
Formation of the GaAs-Ge heterointerface in the presence of oxide.
- Authors
Suprun, S. P.; Fedosenko, E. V.
- Abstract
The data of the X-ray photoelectron spectroscopy and reflection high-energy electron diffraction studies of the formation of the GaAs-Ge heterointerface under incomplete removal of all oxide phases from the GaAs substrate surface are presented. It is shown that the combination of the processes of final Ga2O desorption and Ge deposition allows one to avoid the evaporation of As and the stoichiometry distortion near the interface.
- Subjects
GALLIUM arsenide; GALLIUM compounds; X-ray photoelectron spectroscopy; HIGH energy electron diffraction; STOICHIOMETRY; INTERFACES (Physical sciences); OXIDES
- Publication
JETP Letters, 2009, Vol 89, Issue 2, p84
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364009020088