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- Title
Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires.
- Authors
Fabbri, Filippo; Rotunno, Enzo; Lazzarini, Laura; Fukata, Naoki; Salviati, Giancarlo
- Abstract
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
- Subjects
SEMICONDUCTOR devices; MICROELECTRONICS; NANOWIRES; CATHODOLUMINESCENCE; SEMICONDUCTOR industry; ELECTRONIC circuit design; NANOSTRUCTURED materials
- Publication
Scientific Reports, 2014, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep03603