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- Title
Highly efficient class-F GaN HEMT Doherty amplifier for WCDMA applications.
- Authors
Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Abstract
This article presents a high-efficiency GaN HEMT class-F Doherty amplifier for 2.14-GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6-dB back-off power from Psat) for a single tone. For a one-carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of -22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of -35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2328–2331, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23700
- Subjects
ELECTRONIC amplifiers; BROADBAND communication systems; GALLIUM nitride; CODE division multiple access; ELECTRIC equipment
- Publication
Microwave & Optical Technology Letters, 2008, Vol 50, Issue 9, p2328
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.23700