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- Title
Growth and properties of wide-bandgap semiconductor La-doped SrSnO<sub>3</sub> film under strain conditions.
- Authors
Zhang, Yuyang; Wang, Zhaoyang; Sun, Fei; Zhang, Bangmin; Zheng, Yue
- Abstract
The fast development of electron devices requires new materials with high mobility and low resistivity. Since mobility exceeding 300 cm2/Vs has been reported in stannates, many efforts have been made to improve the mobility in stannate films. SrSnO3 (SSO), a type of stannate with an orthorhombic crystal system, has attracted interest due to its large bandgap and high optical transparency. Although single crystals have demonstrated high mobility, it is difficult to achieve similar high mobility in thin films. Here, we study the influences of growth temperature and substrate strain on film quality and electrical properties. After attempting growth at different temperatures, we demonstrate that 750 °C is more suitable for improving the quality and conductivity of La-doped SrSnO3 (LSSO) films. We also investigate the influence of strain caused by the substrate and find the LSSO film with best electronic properties on BaSnO3 buffer, which may be caused by less dislocations.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 15, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-12800-4