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- Title
Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes.
- Authors
Ersöz, Gülçin; Yücedağ, İbrahim; Bayrakdar, Sümeyye; Altındal, Şemsettin; Gümüş, Ahmet
- Abstract
Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDs) were produced and their current-voltage ( I-V) characteristics were measured in the positive and negative bias regions at 300 K. The basic electronic quantities such as reverse-saturation current ( I ), ideality factor ( n), zero-bias barrier height ( Ф ), series ( R ) and shunt resistances ( R ) were obtained by using I-V data in total darkness and illumination (100 W/m). The values of these parameters were found as 7.79 × 10 A, 5.41, 0.75 eV, 1 kΩ and 130 MΩ in dark) and 4 × 10 A, 4.89, 0.77 eV, 0.9 kΩ and 1.02 MΩ under illumination), respectively. Also the energy density distribution behaviors of surface states ( N ) have been acquired by calculation of effective barrier height ( Ф ) and ideality factor n (V) depending on voltage in total darkness and illumination. The values of N show an exponentially increase from the mid-gap of Si to the lower part of conduction band ( E ) for two conditions. The possible current conduction mechanisms were determined by plotting of the double logarithmic I-V plots in the positive voltage zone and the value of current was found proportional to voltage ( I∼V ). The high values of n and R were ascribed to the certain density distribution of N localized at semiconductor/PPy interface, surface conditions, barrier inequality, the thickness of PPy interlayer and its roughness. The open-circuit voltage of the photodiode was found as 0.36 V under 100 W/m illumination level. This is evidence that the fabricated sample is very sensitive to illumination. Therefore, it can be put into practice in optoelectronic industries as a photodiode or solar cells.
- Subjects
SCHOTTKY barrier diodes; CURRENT-voltage characteristics; LIGHTING; PHOTODIODES; SOLAR cells
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 9, p6413
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-6326-z