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- Title
Mobile line in the acceptor photoluminescence spectrum of “pure” GaAs.
- Authors
Zhuravlev, K. S.; Gilinskiı, A. M.
- Abstract
A new line is observed in the photoluminescence spectra of epitaxial layers of undoped GaAs. The line is recorded in the region of the band–acceptor transitions with a delay relative to the excitation pulse, and with time after the excitation pulse it shifts substantially (by up to 15–18 meV) in the long-wavelength direction. The characteristics of the line attest to the possibility that small, highly doped, local regions with extended density-of-states tails can form in undoped GaAs. © 1997 American Institute of Physics.
- Subjects
GALLIUM arsenide; PHOTOLUMINESCENCE
- Publication
JETP Letters, 1997, Vol 65, Issue 1, p86
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.567330