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- Title
Effect of Al<sub>2</sub>O<sub>3</sub> thickness and oxidant precursors on the interface composition and contamination in Al<sub>2</sub>O<sub>3</sub>/GaN structures.
- Authors
Spelta, Tarek; Martinez, Eugénie; Veillerot, Marc; Fernandes Paes Pinto Rocha, Pedro; Vauche, Laura; Salem, Bassem; Hyot, Bérangère
- Abstract
In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O3/H2O‐based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl− and F−) at this Al2O3/GaN interface.
- Subjects
SECONDARY ion mass spectrometry; OXIDIZING agents; GALLIUM nitride; HARD X-rays; GALLIUM alloys; ALUMINUM gallium nitride; POLLUTANTS; X-ray photoelectron spectroscopy
- Publication
Surface & Interface Analysis: SIA, 2024, Vol 56, Issue 7, p399
- ISSN
0142-2421
- Publication type
Article
- DOI
10.1002/sia.7299