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- Title
MONOGRAIN DEFECT IN POLYSILICON GATES.
- Authors
Parrassin, Thierry; Clément, Laurent
- Abstract
The article focuses on identifying a tricky soft electrical failure in electrical test validation of polysilicon gates. It refers to the common electrical failing factor between a memory cell failing at high voltage and a scan chain working in scan mode but failing in capture mode. It highlights the detection of the failure mode of the monograin defect as a transition fault by scan diagnosis system.
- Subjects
ELECTRIC properties of silicon; LOGIC circuits; INTEGRATED circuits; MICROELECTRONICS; DEFECT tracking (Computer software development)
- Publication
Electronic Device Failure Analysis, 2018, Vol 20, Issue 1, p10
- ISSN
1537-0755
- Publication type
Article
- DOI
10.31399/asm.edfa.2018-1.p010