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- Title
Design of a 0.13μm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product.
- Authors
Sehoon Park; Xuan-Quang Du; Grözing, Markus; Berroth, Manfred
- Abstract
This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidthproduct of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3V including output drivers is 837mW.
- Subjects
POWER amplifiers -- Design &; construction; SILICON germanium integrated circuits; CMOS integrated circuits
- Publication
Advances in Radio Science, 2017, Vol 15, p115
- ISSN
1684-9965
- Publication type
Article
- DOI
10.5194/ars-15-115-2017