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- Title
Investigation of strained In[sub x]Ga[sub 1-x]As/InP quantum wells fabricated by metalorganic compound hydride epitaxy.
- Authors
Bondarev, A. D.; Vinokurov, D. A.; Kapitonov, V. A.; Kovalenkov, O. V.; Sokolova, Z. N.; Tarasov, I. S.
- Abstract
An investigation was made of the possibility of using reduced-pressure MOC hydride epitaxy to fabricate highly strained (compressive stress) In[sub x]Ga[sub 1 - x]As/In[sub 0.53]Ga[sub 0.47]As quantum wells on indium phosphide (100) substrates. The photoluminescence properties of these heterostructures were investigated. It was shown that these heterostructures are potentially useful for laser diodes emitting in the 1.5-2 µm range, which is important for environmental monitoring.
- Subjects
HYDRIDES; QUANTUM wells; ORGANOMETALLIC compounds; HETEROSTRUCTURES
- Publication
Technical Physics Letters, 1998, Vol 24, Issue 11, p886
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262303