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- Title
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT).
- Authors
Sharma, Prachi; Gupta, Navneet
- Abstract
In this paper, we have presented the effect of the density-of-states (DOS) parameters on the performance of n-channel top gated staggered nc-Si TFT. The analysis was performed using ATLAS 2D TCAD simulator from SILVACO. The variation in DOS in nc-Si material and thus on the TFT device performance occurred by altering the channel length and channel quality is presented. The simulation results reveal that the increase in channel length and the degradation in channel quality degrade the trans-conductance and drain current. By iterating the order of parasitic resistance and the value of characteristic decay energy related to material quality, the same trend is achieved for simulated and experimental results for nc- Si TFT with W/L=200μm/50μm.
- Subjects
SIMULATION methods &; models; ELECTRONIC density of states; SILICON; NANOCRYSTALS; THIN film transistors; ELECTRIC properties of thin films
- Publication
International Journal of Nanoelectronics & Materials, 2017, Vol 10, Issue 2, p101
- ISSN
1985-5761
- Publication type
Article