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- Title
Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs.
- Authors
Jain, F.; Gudlavalleti, R. H.; Almalki, A.; Saman, B.; Chan, P-Y.; Chandy, J.; Papadimitrakopoulos, F.; Heller, E.
- Abstract
This paper presents multi-state QDC-QDG FET structures that has the potential to introduce additional states (8 or 16) by utilizing additional mini-energy sub-bands. Mini-energy bands are formed in Si quantum dot channel (QDC) comprising two silicon oxide cladded Si quantum dots (QDs). Quantum simulations are presented to show more states when additional two germanium oxide cladded Ge dots are added on top of two Si QD layers in the gate region. With the addition of a control gate oxide layer, we transform the QDC-QDG-FET into a quantum dot (QD) nonvolatile random access memory (NVRAM). Quantum simulations are presented.
- Subjects
QUANTUM dots; NONVOLATILE random-access memory; QUANTUM gates; SILICON oxide
- Publication
International Journal of High Speed Electronics & Systems, 2023, Vol 32, Issue 2-4, p1
- ISSN
0129-1564
- Publication type
Article
- DOI
10.1142/S0129156423500180