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- Title
Modern Photodetector IR-Modules.
- Authors
Boltar, K. O.; Burlakov, I. D.; Iakovleva, N. I.; Vlasov, P. V.; Lazarev, P. S.
- Abstract
In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced materials; designing the structure of a photosensitive element (PSE) to achieve the minimum dark current, which in turn leads to a change in generations of matrix photodetector modules (PDMs). Several different types of PDMs based on InSb epitaxial structures for the range of 3–5 μm, based on GaAs/AlGaAs QWIP-structures for the range 7.8–9.0 μm, and based on InGaAs XBn-structures for the range 0.9–1.7 μm were developed and investigated. The foreign analogs are shown, and the advantages given by the new capabilities offered by new detector technologies are considered.
- Subjects
TECHNOLOGICAL innovations; INDIUM gallium arsenide; PRODUCT improvement; HETEROSTRUCTURES; AUDITING standards
- Publication
Journal of Communications Technology & Electronics, 2022, Vol 67, Issue 9, p1175
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S1064226922090030