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- Title
Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure.
- Authors
Zhang, Bosen; Chen, Jieyao; Wang, Junlin; Li, Wenjia; Tong, Kaiyu; Li, Guanqi; Ma, Jun; Wu, Jing; Xu, Yongbing
- Abstract
Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.
- Subjects
NONVOLATILE memory; COERCIVE fields (Electronics)
- Publication
SPIN (2010-3247), 2024, Vol 14, Issue 1, p1
- ISSN
2010-3247
- Publication type
Article
- DOI
10.1142/S2010324723500297