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- Title
Chitosan solid electrolyte as electric double layer in multilayer MoS<sub>2</sub> transistor for low-voltage operation.
- Authors
Jiang, Jie; Kuroda, Marcelo A.; Ahyi, Ayayi C.; Isaacs‐Smith, Tamara; Mirkhani, Vahid; Park, Minseo; Dhar, Sarit
- Abstract
Biocompatible solid electrolyte chitosan is introduced as a protonic/electronic electric double layer (EDL) dielectric in a multilayer MoS2 transistor. This chitosan-bioinspired transistor can operate at a low working voltage (<3 V) and exhibits an asymmetric ambipolar behavior. A high on/off ratio (∼104) was achieved for both electrons and holes, in conjunction with a very steep subthreshold swing (67 mV/dec) which is close to the theoretical limit of an ideal field-effect transistor (60 mV/dec). It was established that the on-state conductance of these devices is strongly limited by the contact resistance of the metal-MoS2 junctions, and the conductance can be increased by a factor of ∼3 by using dual-gate electrostatic modulation. Further exploiting the double-gate geometry allows us to characterize the contact resistance in the on-regime. We make a numerical simulation and observe important contributions that are independently modulated by back and top gates stemming from Schottky barriers formed at the MoS2/metal interface and the chitosan-induced charge accumulation near the electrode, respectively. Such EDL multilayer MoS2 transistors with bioinspired chitosan solid electrolyte can provide a new opportunity for the fabrication of low voltage and cost-effective two-dimensional semiconductor devices which are also biocompatible and environment friendly.
- Subjects
CHITOSAN; ELECTRIC double layer; FIELD-effect transistors; ELECTRODES; CONTACT resistance (Materials science); MOLYBDENUM disulfide
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 10, p2219
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532284