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- Title
Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures.
- Authors
Inamdar, Sumayya; Ganbavle, Vinayak; Shaikh, Shahin; Rajpure, Kesu
- Abstract
ZnO and Al-doped ZnO (AZO) thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis method. The metal-semiconductor-metal (MSM) UV photodetector based on ZnO thin films with two device configuration Ag/AZO/ZnO/Ag and Ag/ZnO/ZnO/Ag have been studied. AZO and ZnO thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis technique. The effect of the buffer layer on the physicochemical and UV-sensing properties of the AZO and ZnO thin-film-based UV photodetectors were analyzed. The XRD results suggested that the buffer layer improves the crystalline quality of the ZnO thin films. The device with configuration Ag/AZO/ZnO/Ag exhibits a maximum photocurrent of about 876 µA at 5 V bias at 365 nm peak wavelength. The linear I- V characteristic of the photodetector reveals the good ohmic contacts between metal-semiconductor junctions. The AZO-based UV photodetector with ZnO buffer layer shows a maximum photoresponsivity of about 340 A/W, which is much higher than that of the ZnO-based UV photodetector with ZnO buffer layer. The photoresponse and photoswitching characteristics of the device demonstrate that a ZnO UV photodetector with a buffer layer offers a new way to fabricate devices on a buffer-layer-coated substrate.
- Subjects
BUFFER layers; MAGNETIC properties of thin films; DOPING agents (Chemistry); SUPERCONDUCTING films; THIN film manufacturing; CONDENSED matter physics; PHOTODETECTORS
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 8, p1704
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431850