We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window.
- Authors
Wen, Yi; Xu, Xiao-jie; Tao, Meng-ling; Lu, Xiao-fei; Deng, Xiao-chuan; Li, Xuan; Li, Jun-tao; Li, Zhi-qiang; Zhang, Bo
- Abstract
A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm2 is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ VF = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm2.
- Publication
Nanoscale Research Letters, 2020, Vol 15, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/s11671-020-03443-5