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- Title
Growth of large-area, few-layer graphene by femtosecond pulsed laser deposition with double-layer Ni catalyst.
- Authors
Dong, Xiangming; Liu, Shibing; Song, Haiying; Gu, Peng
- Abstract
We demonstrated a simple method of fabricating large-area, few-layer graphene that involves performing femtosecond pulsed laser deposition at a relatively low temperature of 500 °C and a high pressure of 10 $$^{-5}$$ Torr using a double-layer Ni catalyst. The average thickness of the resulting graphene films was less than 3 nm, their average area was more than 1 cm $$^{2}$$ , and their electrical resistivity was only 0.44 $${\rm m}\Omega .{\rm cm}$$ . The laser deposition process was also conducted at different laser energies, and it was observed that the quality of the few-layer graphene could be improved using a double-layer catalyst at a higher laser energy. The ejection of C clusters by breaking the C-C bonds of the HOPG through multi-photon ionization can explain the observed graphene formation characteristics. The insights may facilitate the controllable synthesis of large-area, mono-layer graphene and promote the commercialize application of the graphene.
- Subjects
FEMTOSECOND pulses; LASER deposition; GRAPHENE; CATALYSTS; LASERS; OPTICAL materials
- Publication
Journal of Materials Science, 2017, Vol 52, Issue 4, p2060
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-016-0494-3