Found: 9
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Band transport across a chain of dopant sites in silicon over micron distances and high temperatures.
- Published in:
- Scientific Reports, 2016, p. 19704, doi. 10.1038/srep19704
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- Article
Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021).
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202170151
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- Article
Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202011175
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- Article
Modulation of viability of live cells by focused ion-beam exposure.
- Published in:
- Biotechnology & Bioengineering, 2011, v. 108, n. 1, p. 222, doi. 10.1002/bit.22917
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- Article
Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.
- Published in:
- Nature Nanotechnology, 2012, v. 7, n. 7, p. 443, doi. 10.1038/nnano.2012.94
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- Article
Enhancing semiconductor device performance using ordered dopant arrays.
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- Nature, 2005, v. 437, n. 7062, p. 1128, doi. 10.1038/nature04086
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- Article
Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond.
- Published in:
- Scientific Reports, 2015, p. 12244, doi. 10.1038/srep12244
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- Article
GeV<sub>n</sub> complexes for silicon-based room-temperature single-atom nanoelectronics.
- Published in:
- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-36441-w
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- Article
Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength.
- Published in:
- Nanomaterials (2079-4991), 2019, v. 9, n. 3, p. 416, doi. 10.3390/nano9030416
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- Article