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- Title
High Bipolar Conductivity and Robust In‐Plane Spontaneous Electric Polarization in Selenene.
- Authors
Wang, Dan; He, Meng‐Dong; Wang, Xin‐Jun; Tang, Li‐Ming; Jiang, Xing‐Xing; Tan, Jie‐Yao; Chen, Ke‐Qiu
- Abstract
Selenene has been predicted as a new member of an atomically thin 2D crystalline material family as of last year. With first principle calculations, two different stable phases of selenene, one with the 1T‐MoS2‐like structure (α‐Se) and the other with alternating arrangement structure of deformed four‐membered and six‐membered rings (b‐Se) are identified. Further research indicates that monolayer α‐Se exhibits excellent bipolar conductivity, possessing rather high hole mobility close to that of graphene, and monolayer b‐Se shows a robust in‐plane spontaneous electric polarization of 13.46 mC cm−2 and a polarization reversing barrier of 422 meV per unit cell. The findings offer a promising material for high speed electronic devices and broaden the family of 2D ferroelectric materials, especially the family of elemental ferroelectric materials. This study demonstrates that selenene (Se) exits in two stable structures with multivalency nature. Monolayer α‐Se possesses a rather high carrier mobility, while monolayer β‐Se has a considerable in‐plane spontaneous polarization. The findings provide a promising material for high speed electronic devices and offer an understanding of elemental ferroelectricity.
- Subjects
SELENIUM; POLARIZATION (Electricity); ELECTRIC conductivity; MOLYBDENUM disulfide; FERROELECTRICITY
- Publication
Advanced Electronic Materials, 2019, Vol 5, Issue 2, pN.PAG
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.201800475