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- Title
X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.
- Authors
Shul'pina, I. L.; Kyutt, R. N.; Ratnikov, V. V.; Prokhorov, I. A.; Bezbakh, I. Zh.; Shcheglov, M. P.
- Abstract
Si(As, P, B) and GaSb(Si) single crystals are used as examples to demonstrate the possibilities of methods of X-ray diffraction for the diagnostics (examination of a real structure) of highly doped semiconductor crystals. Prominence is given to characterizing the state of impurity: whether it is in a solid solution or at a certain stage of its decomposition. An optimum combination of X-ray diffraction methods is found to obtain the most complete information on the microsegregation and structural heterogeneity in crystals with low and high X-ray absorption. This combination is based on X-ray diffraction topography and X-ray diffractometry methods having an increased sensitivity to lattice strains.
- Subjects
X-ray diffraction; CRYSTALS; SOLID solutions; SEMICONDUCTORS; SEMICONDUCTOR doping
- Publication
Technical Physics, 2010, Vol 55, Issue 4, p537
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784210040183